
227-0159-00L "Quantum Transport for Engineers"

M. Luisier

6 KP

Donnerstag 8-12
ETZ G91


The continuous scaling of electronic devices has given rise to structures whose dimensions do not exceed a few atomic layers. At this size, electrons do not behave as particle any more, but as propagating waves and the classical representation of electron transport as the sum of drift-diffusion processes fails. The purpose of this class is to explore and understand the displacement of electrons through nanoscale device structures based on state-of-the-art quantum transport methods and to get familiar with the underlying equations by developing his own nanoelectronic device simulator.

- Introduction to quantum transport modeling
- Bandstructure representation and effective mass approximation
- Open vs closed boundary conditions to the Schrödinger equation
- Comparison of the Wave Function and Non-equilibrium Green's Function formalisms as solution to the Schrödinger equation
- Self-consistent Schödinger-Poisson simulations
- Quantum transport simulations of resonant tunneling diodes and quantum well nano-transistors
- Top-of-the-barrier simulation approach to nano-transistor
- Electron interactions with their environment (phonon, roughness, impurity, ...)
- Multi-band transport models

Basic knowledge of semiconductor device physics and quantum mechanics

Lecture slides are distributed every week

Empfohlene Bücher:
"Electronic Transport in Mesoscopic Systems", Supriyo Datta, Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, 1997
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