"Simulation microscope" examines transistors of the future
The research groups led by Mathieu Luisier from the Institute for Integrated Systems (IIS) at ETH Zurich and Nicola Marzari from EPF Lausanne have evaluated 100 possible 2-D materials that could be used to build future, high-performance transistors. 13 promising candidates have been discovered.
The miniaturization of electronic components is known to create undesireable side effects that impair their functionality, for example quantum mechanical phenomena and increased leakage currents.
The new study from ETHZ and EPFL shows that parts of these problems could be overcome with new two-dimensional (2-D) materials — or at least that is what the simulations carried out on the "Piz Daint" supercomputer suggest.
More information about the study can be found in the external page article by Simone Ulmer on the website of the external page Swiss National Supercomputing Centre.
external page https://www.cscs.ch/science/chemistry-materials/2020/simulation-microscope-examines-transistors-of-the-future/